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KFG5616D1M-DEB Datasheet, MEMORY, Samsung semiconductor

KFG5616D1M-DEB Datasheet, MEMORY, Samsung semiconductor

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KFG5616D1M-DEB Features and benefits

KFG5616D1M-DEB Features and benefits


* Design Technology: 0.12µm
* Voltage Supply - 1.8V device(KFG5616Q1M) : 1.7V~1.95V - 2.65V device(KFG5616D1M) : 2.4V~2.9V - 3.3V device(KFG5616U1M) : 2.7V~3.6V <.

KFG5616D1M-DEB Application

KFG5616D1M-DEB Application

where Product failure could result in loss of life or personal or physical harm, or any military or defense application,.

KFG5616D1M-DEB Description

KFG5616D1M-DEB Description

is revised. 3. Changed Read while Load and Write While Program diagram. 4. Revised OTP Flow Chart 5. Added Multi Block Erase operation cases 6. Added Spare Assignment information 7. Added NAND Array Memory Map 8. Added OTP load/program/lock operation.

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TAGS

KFG5616D1M-DEB
OneNAND256
FLASH
MEMORY
Samsung semiconductor

Manufacturer


Samsung semiconductor

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